Study of novel organic optoelectronics materials based on thiophene and silicon by time-of-flight laser desorption/ionization mass spectrometry
T14N4
A.P. Pleshkova, E.S. Kuznetsova
The results of investigation of a variety of new organic semiconductors for optoelectronics based on thiophene and silicon by time-of-flight direct laser desorption/ionization mass spectrometry are given. The peculiarities of behavior of these species were analysed. The main route of ionisation for many of the compounds was found to be the only formation of molecular radical cation. For a small group of species, protonation and deprotonation were observed rather than the above path.
However, there were some molecules for which several competing routes were detected, namely, the generation of molecular radical cation, protonation and deprotonation.
